Total project value: PLN 1,775,000.00
Funding value: PLN 1,597,500.00
Implementation period: June 2021 – May 2023
Project title: “Technology for multifunctional GaN/SiC transistor structure enclosures”,
Project acronym: GaNPack
Project Objective:
The aim of the project is to develop a technology for the fabrication of gallium nitride-based transistor housings for microwave power electronics for high-power amplifiers used in smart microwave radiation sources and Doherty amplifiers for LTE and 5G network base stations, GaN HEMT (High Electron Mobility Transistors) power transistors fabricated on silicon carbide substrates. The research plans to use structures made at Lukasiewicz-ITE based on proprietary technology. Advanced multilayer printed circuit board (PCB) technology and embedded components will be used to make the case and connections of the transistor in the lead-out. This will allow for efficient heat dissipation, optimal assembly and efficient current distribution in the structure. The work will be carried out on an upgraded, state-of-the-art laboratory PCB manufacturing line using advanced production equipment. The work is planned to use the world’s most modern technologies (HDI, embedded components, plasma processing, laser processing , multilayer complex substrates, chemical treatment and substrate preparation technologies).
Project Manager:
MSc Eng. Wojciech Stęplewski